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Thank you for the link. Lower beta transistors can be used with smaller values of R4. Thank you for understanding my problem. What is your load current? The IRFN – data sheet here needs about To do that with eg 0.
Sign up using Facebook. Saturation voltage of a bipolar transistor can be less or much less than the Vbe drop. Home Questions Tags Users Unanswered. BCxx7 data sheet here See Fig 9.
IRF IRFN Power MOSFET P-Channel 23A V
There are many Irf9540b pins in WiFi chip and they are all connected so i have no option of disconnecting all the ground pins to make a low side switch.
However, the graphs are for typical values.
If you look at graph in the datasheet of current vs gate-source voltage Fig 3 and extrapolate down to 3V you will see that almost no current will flow. So a Orf9540n may not do what you want but a single bipolar may.
If you draw a Darlington cct you will see it is different. Do you have easy access to a range of parts?
Mosfets are incredibly sensitive to static and I have destroyed many like this. R3 is ‘or safety’ to ensure Q2 turns off.
Vbe can be say 0. R4 then not needed but does no harm.
Russell McMahon k 9 Q2 can be a single adequately rated PNP or several smaller ones in parallel. I tried using darlington pair but the voltage drop is around 1. All the circuit samples in the data sheet use 10V as the gate voltage.
IRFN – Infineon Technologies
I have no idea what could be the issue? This affects what is best to use. Is that the maximum and is that certain? So now the Vgs is Lower values of R4 may be needed to get low enoughy saturation voltage. For instance if in eg Mumbai or Bangalore there are many suppliers.
I am working in Delhi. Although they usually seem to fail on rather than off.